for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 32 hmc326ms8g / 326ms8ge gaas ingap hbt mmic driver amplifier, 3.0 - 4.5 ghz v08.0808 general description features functional diagram the hmc326ms8g & HMC326MS8GE are high efficiency gaas ingap heterojunction bipolar transistor (hbt) mmic driver ampli ers which operate between 3.0 and 4.5 ghz. the ampli er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved rf and thermal performance. the ampli er provides 21 db of gain and +26 dbm of saturated power from a +5v supply voltage. power down capability is available to conserve current consumption when the ampli er is not in use. internal circuit matching was optimized to provide greater than 40% pae. psat output power: +26 dbm > 40% pae output ip3: +36 dbm high gain: 21 db vs: +5v ultra small package: msop8g electrical speci cations, t a = +25 c, vs = 5v, vpd = 5v typical applications the hmc326ms8g / HMC326MS8GE is ideal for: ? microwave radios ? broadband radio systems ? wireless local loop driver ampli er parameter min. typ. max. units frequency range 3.0 - 4.5 ghz gain 18 21 db gain variation over temperature 0.025 0.035 db / c input return loss 12 db output return loss 7db output power for 1db compression (p1db) 21 23.5 dbm saturated output power (psat) 26 dbm output third order intercept (ip3) 32 36 dbm noise figure 5db supply current (icc) vpd = 0v / 5v 0.001 / 130 ma control current (ipd) 7ma switching speed ton/toff 10 ns
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 33 p1db vs. temperature psat vs. temperature broadband gain & return loss gain vs. temperature output ip3 vs. temperature -20 -15 -10 -5 0 5 10 15 20 25 2 2.5 3 3.5 4 4.5 5 5.5 6 s21 s11 s22 response (db) frequency (ghz) 15 17 19 21 23 25 3 3.25 3.5 3.75 4 4.25 4.5 +25c +85c -40c gain (db) frequency (ghz) 20 22 24 26 28 30 3 3.25 3.5 3.75 4 4.25 4.5 +25c +85c -40c output p1db (dbm) frequency (ghz) 20 22 24 26 28 30 3 3.25 3.5 3.75 4 4.25 4.5 +25c +85c -40c psat (dbm) frequency (ghz) 30 32 34 36 38 40 3 3.25 3.5 3.75 4 4.25 4.5 +25c +85c -40c oip3 (dbm) frequency (ghz) 0 5 10 15 20 25 30 35 40 45 -8-6-4-2024681012 output power (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) power compression @ 3.5 ghz hmc326ms8g / 326ms8ge v08.0808 gaas ingap hbt mmic driver amplifier, 3.0 - 4.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 34 reverse isolation vs. temperature noise figure vs. temperature input return loss vs. temperature output return loss vs. temperature gain, power & quiescent supply current vs. vpd @3.5 ghz -20 -15 -10 -5 0 3 3.25 3.5 3.75 4 4.25 4.5 +25c +85c -40c return loss (db) frequency (ghz) -15 -12 -9 -6 -3 0 3 3.25 3.5 3.75 4 4.25 4.5 +25c +85c -40c return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 3 3.25 3.5 3.75 4 4.25 4.5 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 2 4 6 8 10 3 3.25 3.5 3.75 4 4.25 4.5 +25c +85c -40c noise figure (db) frequency (ghz) 12 15 18 21 24 27 0 30 60 90 120 150 1.5 2 2.5 3 3.5 4 4.5 5 gain (db), p1db (dbm), psat (dbm) icc (ma) vpd (vdc) icc p1db gain psat hmc326ms8g / 326ms8ge v08.0808 gaas ingap hbt mmic driver amplifier, 3.0 - 4.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 35 outline drawing absolute maximum ratings notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. collector bias voltage (vcc) +5.5 vdc control voltage range (vpd) +5.5 vdc rf input power (rfin)(vs = vpd = +5vdc) +15 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 14 mw/c above 85 c) 0.916 w thermal resistance (junction to ground paddle) 71 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1a part number package body material lead finish msl rating package marking [3] hmc326ms8g low stress injection molded plastic sn/pb solder msl1 [1] h326 xxxx HMC326MS8GE rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h326 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information electrostatic sensitive device observe handling precautions hmc326ms8g / 326ms8ge v08.0808 gaas ingap hbt mmic driver amplifier, 3.0 - 4.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 36 evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 104356 [1] item description j1 - j2 pcb mount sma rf connector j3 2mm dc header c1 - c2 330 pf capacitor, 0603 pkg. c3 0.7 pf capacitor, 0603 pkg. c4 3.0 pf capacitor, 0402 pkg. c5 2.2 f capacitor, tantalum l1 3.3 nh inductor, 0805 pkg. u1 hmc326ms8g / HMC326MS8GE ampli er pcb [2] 104106 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350, 10 mil thick, tr = 3.48 hmc326ms8g / 326ms8ge v08.0808 gaas ingap hbt mmic driver amplifier, 3.0 - 4.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 37 application circuit recommended component values l1 3.3 nh c1 - c2 330 pf c3 0.7 pf c4 3.0 pf c5 2.2 f impedance tl1 tl2 tl3 physical length (mils) 65 256 128 electrical length (degs) 12 47 23.3 hmc326ms8g / 326ms8ge v08.0808 gaas ingap hbt mmic driver amplifier, 3.0 - 4.5 ghz
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